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DG858BW45
DG858BW45
Gate Turn-off Thyristor
Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000
FEATURES
q q q q q q
Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT(AV) dVD/dt 1000V/s 300A/s diT/dt
APPLICATIONS
q q q q q q q
Variable speed A.C. motor drive inverters (VSD-AC) Uninterruptable Power Supplies High Voltage Converters Choppers Welding Induction Heating DC/DC Converters
Package outline type code: W. See Package Details for further information.
Figure 1. Package outline
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage VDRM V 4500 Repetitive Peak Reverse Voltage VRRM V 16 Conditions
DG858BW45
Tvj = 125oC, IDM = 100mA, IRRM = 50mA
CURRENT RATINGS
Symbol ITCM IT(AV) IT(RMS) Parameter Conditions Max. 3000 1180 1850 Units A A A
1/19
Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/s, Cs = 3F Mean on-state current RMS on-state current THS = 80oC. Double side cooled, half sine 50Hz THS = 80oC. Double side cooled, half sine 50Hz
DG858BW45
SURGE RATINGS
Symbol ITSM I2 t diT/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC VD = 3000V, IT = 3000A, Tj = 125oC, IFG > 40A, Rise time > 1.0s To 66% VDRM; RGK 1.5, Tj = 125oC To 66% VDRM; VRG = -2V, Tj = 125oC Peak stray inductance in snubber circuit IT = 3000A, VD = VDRM,-Tj = 125C, dI/GQ = 40A/ s, Cs = 3.0F Max.
20.0
Units kA A2s A/s
V/s
2.0 x 106 300 130 1000 200
dVD/dt LS
Rate of rise of off-state voltage
V/s nH
GATE RATINGS
Symbol VRGM IFGM
PFG(AV)
Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time
Conditions
Min.
-
Max. 16 100 20 24 60 -
Units V
This value maybe exceeded during turn-off
20 -
A W kW A/s s s
PRGM diGQ/dt tON(min) tOFF(min)
20 50 100
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg 2/19 Min.
Max. 0.011 0.017 0.03 0.0021 125 125 44.0
Units
o
per contact -40 -40 36.0
C/W C/W C/W C/W
o
o
o
Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range
Clamping force
Clamping force 40.0kN With mounting compound
o
C C
o
kN
DG858BW45
CHARACTERISTICS
Tj = 125oC unless stated otherwise Symbol VTM
IDM Parameter Conditions
Min. -
Max. 4.0 100 50 1.2 4.0 50 2700 2.0 6.0
13500
Units V mA mA V A mA mJ s s mJ s s s C C A
On-state voltage Peak off-state current
Peak reverse current Gate trigger voltage
At 4000A peak, IG(ON) = 10A d.c. VDRM = 4500V, VRG = 0V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 2000V IT = 3000A, dIT/dt = 300A/s IFG = 40A, rise time < 1.0s
IRRM VGT
IGT
Gate trigger current Reverse gate cathode current Turn-on energy Delay time
Rise time
IRGM
EON
td tr
EOFF
Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current IT = 3000A, VDM = VDRM Snubber Cap Cs = 3.0F, diGQ/dt = 40A/s
tgs tgf tgq QGQ QGQT IGQM
25.0 2.5 27.5 12000 24000 950
-
3/19
DG858BW45
CURVES
2.5 12.5
2.0
10.0
Gate trigger voltage VGT - (V)
1.5
7.5
1.0 VGT 0.5
5.0
2.5
Gate trigger current IGT - (A)
IGT 0 -50 -25 75 0 25 50 100 Junction temperature Tj - (C) 125 0 150
Figure 2. Maximum gate trigger voltage/current vs junction temperature
4000
Instantaneous on-state current IT - (A)
Measured under pulse conditions. IG(ON) = 10A Half sine wave 10ms
3000
Tj = 25C
Tj = 125C 2000
1000
0 1.0
1.5
2.0 2.5 3.0 3.5 Instantaneous on-state voltage VTM - (V)
Figure 3. On-state characteristics
4.0
4/19
DG858BW45
4000
Maximum permissible turn-off current ITCM - (A)
Conditions: T = 125C, 3500 Vj = V DM DRM dIGQ/dt = 40A/s 3000 2500 2000 1500 1000
0
4.0 5.0 1.0 2.0 3.0 Snubber capacitance Cs - (F)
6.0
Figure 4. Maximum dependence of ITCM on Cs
0.015
Thermal impedance - C/W
0.010
dc
0.005
0 0.001
0.01
0.1
Time - (s)
1.0
10
100
Figure 5. Maximum (limit) transient thermal impedance - double side cooled
50
Peak half sine wave on-state current - (kA)
40
30
20
10
0 0.0001
0.001
0.01 Pulse duration - (s)
0.1
1.0
5/19
Figure 6. Surge (non-repetitive) on-state current vs time
DG858BW45
5500 5000 4500
Mean on-state power dissipation - (W)
Conditions; IG(ON) = 10A
dc
180 4000 3500 3000 2500 2000 1500 1000 500 0 0 120
60 30
500 1000 1500 Mean on-state current IT(AV) - (A)
60
70 80 90 100 110 120 130 Maximum permissible case temperature - (C)
Figure 7. Steady state rectangular wave conduction loss - double side cooled
4000 3500 3000 60 2500 30 2000 1500 1000 500 0 0 Conditions; IG(ON) = 10A 120 90
180
Mean on-state power dissipation- (W)
200 400 600 800 1000 1200 Mean on-state current IT(AV) - (A)
80 90 100 110 120 130 Maximum permissible case temperature - (C)
Figure 8. Steady state sinusoidal wave conduction loss - double side cooled 6/19
DG858BW45
4500
Turn-on energy loss EON - (mJ)
Conditions: T = 25C 4000 j IFGM = 40A Cs = 3F 3500 Rs = 10 Ohms dIT/dt = 300A/s dIFG/dt = 40A/s 3000
2500 2000 1500 1000 500 0 0 500 1000 1500 2000 On-state current IT - (A)
Figure 9. Turn-on energy vs on-state current
VD = 3000V
VD = 2000V
VD = 1000V
2500
3000
8000 7000 Conditions: IT = 3000A, Tj = 25C, Cs = 3.0F, Rs = 10 Ohms dIT/dt = 300A/s, dIFG/dt = 40A/s
Turn-on energy loss EON - (mJ)
6000 5000 4000
VD = 3000V 3000 2000 1000 0 0 10 20 30 40 50 60 70 Peak forward gate current IFGM- (A) 80 VD = 2000V VD = 1000V
Figure 10. Turn-on energy vs peak forward gate current
7/19
DG858BW45
4500 Conditions: Tj = 125C 4000 IFGM = 40A Cs = 3.0F 3500 Rs = 10 Ohms dIT/dt = 300A/s dIFG/dt = 40A/s 3000 2500 2000 1500
VD = 3000V
Turn-on energy loss EON - (mJ)
VD = 2000V
VD = 1000V
1000 500 0 0 500 1000 1500 2000 On-state current IT - (A)
Figure 11. Turn-on energy vs on-state current
2500
3000
10000 9000 8000
Turn-on energy loss EON - (mJ)
7000 6000 5000 4000 3000 2000 1000 0 0
Turn-on energy loss EON - (mJ)
Conditions: IT = 3000A Tj = 125C Cs = 3.0F Rs = 10 Ohms dIT/dt = 300A/s dIFG/dt = 40A/s
5000 Conditions: I = 3000A 4500 T Tj = 125C Cs = 3.0F 4000 Rs = 10 Ohms IFGM = 40A 3500 dIFG/dt = 40A/s 3000 2500 2000 1500
VD = 3000V
VD = 2000V
VD = 2250V VD = 2000V VD = 1000V
VD = 1000V
1000 500 0 50 100 150 200 250 300 350 Rate of rise of on-state current dIT/dt - (A/s)
Figure 13. Turn-on energy vs rate of rise of on-state current
10 20 30 40 50 60 70 Peak forward gate current IFGM - (A)
80
Figure 12. Turn-on energy vs peak forward gate current 8/19
DG858BW45
Turn-on delay time and rise time - (s)
7.0 6.0 5.0 4.0 3.0 td 2.0 1.0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000
tr Conditions: Tj = 125C, IFGM = 40A Cs = 3.0F, Rs = 10 Ohms, dIT/dt = 300A/s, VD = 2000V
Fig.ure 14. Delay and rise time vs on-state current
12.0 11.0 10.0
Turn-on delay time and rise time - (s)
9.0 8.0 7.0 6.0 5.0
Conditions: IT = 3000A Tj = 125C Cs = 3.0F Rs = 10 Ohms dIT/dt = 300A/s dIFG/dt = 40A/s VD = 2000V
tr 4.0 3.0 2.0 1.0 0 10 20 30 40 50 60 70 Peak forward gate current IFGM - (A) 80 td
Figure 15. Delay and rise time vs peak forward gate current
9/19
DG858BW45
9000 Conditions: Tj = 25C 8000 Cs = 3.0F dIGQ/dt = 40A/s 7000 6000 5000 4000 3000 2000 1000 0 A: VDM = 100% VDRM B: VDM = 75% VDRM C: VDM = 50% VDRM 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 C
A B
Turn-off energy loss EOFF - (mJ)
Figure 16. Turn-off energy loss vs on-state current
9000 Conditions: I = 3000A 8500 T Tj = 25C Cs = 3.0F 8000 7500 7000 6500 6000 VDM = 50% VDRM 5500 5000 4500 4000 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt- (A/s)
Figure 17. Turn-off energy vs rate of rise of reverse gate current 10/19
VDM = 100% VDRM
Turn-off energy per pulse EOFF - (mJ)
VDM = 75% VDRM
DG858BW45
14000
Turn-off energy loss EOFF - (mJ)
Conditions: Tj = 125C 12000 Cs = 3.0F dIGQ/dt = 40A/s 10000 8000 6000 4000 2000 0 0 500 1000 1500 2000 On-state current IT - (A)
Figure 18. Turn-off energy vs on-state current
A B
C
A: VDM = 100% VDRM B: VDM = 75% VDRM C: VDM = 50% VDRM 2500 3000
14000 13000 12000 11000 VDM = 75% VDRM 10000 9000 8000 7000 VDM = 50% VDRM Conditions: IT = 3000A Tj = 125C Cs = 3.0F VDM = 100% VDRM
Turn-off energy per pulse EOFF - (mJ)
6000 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt- (A/s)
Figure 19. Turn-off energy loss vs rate of rise of reverse gate current
11/19
DG858BW45
16000 Conditions: T = 125C 14000 j VDM = VDRM dIGQ/dt = 40A/s 12000 10000 8000 6000 4000 2000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Cs = 2.0F Cs = 3.0F Cs = 2.5F Cs = 4.0F
Turn-off energy per pulse EOFF - (mJ)
3500
Figure 20. Turn-off energy vs on-state current
Conditions: Cs = 3.0F 22.5 dI /dt = 40A/s GQ 20.0
Gate storage time tgs - (s)
25.0
Tj = 125C
Tj = 25C
17.5 15.0 12.5 10.0 7.5 5.0 2.5 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000
Figure 21. Gate storage time vs on-state current
12/19
DG858BW45
40.0 Conditions: IT = 3000A Cs = 3.0F 35.0
Gate storage time tgs - (s)
30.0
25.0 Tj = 125C
20.0
Tj = 25C
15.0 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Figure 22. Gate storage time vs rate of rise of reverse gate current
3.0 Conditions: Cs = 3.0F dIGQ/dt = 40A/s 2.0 Tj = 25C 1.0 Tj = 125C
Gate fall time tgf - (s)
0 0 500 1000 1500 2000 On-state current IT - (A)
Figure 23. Gate fall time vs on-state current
2500
3000
13/19
DG858BW45
3.0 Conditions: IT = 3000A Cs = 3.0F 2.5
Gate fall time tgf - (s)
Tj = 125C
2.0 Tj = 25C 1.5
1.0 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Figure 24. Gate fall time vs rate of rise of reverse gate current
1000 Conditions: C = 3.0F 900 s dIGQ/dt = 40A/s 800 Tj = 25C 700 600 500 400 300 200 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Tj = 125C
Peak reverse gate current IGQM - (A)
Figure 25. Peak reverse gate current vs on-state current
14/19
DG858BW45
1000 Conditions: IT = 3000A CS = 3.0F
Peak reverse gate current IGQM - (A)
Tj = 125C
900 Tj = 25C
800
700
600 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Figure 26. Reverse gate current vs rate of rise of reverse gate current
Total turn-off gate charge QGQ - (C)
12000
Conditions: C = 3.0F 10000 dIS /dt = 40A/s GQ 8000 6000 4000 2000 0 0 500 1000 1500 2000 On-state current IT - (A)
Tj = 125C
Tj = 25C
2500
3000
Figure 27. Turn-off gate charge vs on-state current
15/19
DG858BW45
15000 14000
Turn-off gate charge QGQ - (C)
Conditions: IT = 3000A CS = 3.0F
13000 12000 11000 10000 9000 8000 Tj = 25C Tj = 125C
7000 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Figure 28. Turn-off gate charge vs rate of rise of reverse gate current
Rate of rise of off-state voltage dV/dt - (V/s)
1000
Tj = 125C
500
VD = 2250V
0 0.1
VD = 3000V 1.0 10 100 Gate cathode resistance RGK - (Ohms) 1000
Figure 29. Rate of rise of off-state voltage vs gate cathode resistance
16/19
DG858BW45
Anode voltage and current
0.9VD
0.9IT
dVD/dt VD IT VD VDM
0.1VD td tgt tr
VDP tgs tgf
ITAIL
dIFG/dt IFG
tgq
Gate voltage and current
VFG 0.1IFG 0.1IGQ tw1 QGQ 0.5IGQM IGQM
IG(ON)
VRG
V(RG)BR
Recommended gate conditions: ITCM = 3000A IFG = 40A IG(ON) = 10A d.c. tw1(min) = 20s IGQM = 950A diGQ/dt = 40A/s QGQ = 12000C VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted
Figure 30. General switching waveforms
17/19
DG858BW45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.6 x 2.0 deep (One in each electrode)
Auxiliary cathode connector O3.0
Gate connector O3.0
12
Anode O120 max O84.6 nom
O84.6 nom 72 max Cathode
Nominal weight: 1700g Clamping force: 40kN 10% Lead length: 600mm Package outine type code: W
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of V , r on-state characteristic
TO T
Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177
Impoved gate drive for GTO series connections
18/19
27.0 25.5
DG858BW45
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4096-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
19/19

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